Nitrogen ion induced 2D-GaN layer formation of GaAs (001) surface

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 9, 2009, Pages 5659-5663

  Kumar, Praveen ^a,b   Bhattacharya, S ^d   Govind, ^a   Merita, B R ^b   Shivaprasad, S M ^c  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^c JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

^d BANARAS HINDU UNIVERSITY   (India)

Author keywords

Ga; GaAs; Nitridation; X ray Photoelectron Spectroscopy

Indexed keywords

AUGER PEAK; CORE LEVELS; CORE-LEVEL PEAKS; CORE-LEVEL SPECTRA; ELECTRONIC CHANGES; FLUENCES; GA; GAAS; GAAS(001); GAN LAYERS; IN-SITU; ION ENERGIES; ION ETCHING; NITROGEN ION BEAM; NITROGEN IONS; ROOM TEMPERATURE; VALANCE BAND SPECTRA;

BINDING ENERGY; GALLIUM ALLOYS; GALLIUM NITRIDE; ION BEAMS; ION BOMBARDMENT; IONS; NITRIDATION; NITROGEN; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70350335848     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1183     Document Type: Conference Paper

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