Nitridation of GaAs(1 0 0) substrates and Ga/GaAs systems studied by XPS spectroscopy

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 614-618

  Ould Metidji, Y ^a   Bideux, L ^a   Baca, D ^b   Gruzza, B ^a   Matolin, V ^b  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b CHARLES UNIVERSITY   (Czech Republic)

Author keywords

Ga GaAs; GaAs; Nitridation; X ray photoelectron spectroscopy

Indexed keywords

ARGON; ETCHING; ION BOMBARDMENT; NITROGEN; PRESSURE EFFECTS; SURFACE STRUCTURE; THERMAL EFFECTS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

NITRIDATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037903246     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00395-7     Document Type: Conference Paper

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