Growth of GaN on Si substrates using BP thin layer as a buffer

Materials Science and Engineering: B

Volumn 75, Issue 2-3, 2000, Pages 207-209

  Nishimura, Suzuka ^a   Terashima, Kazutaka ^a  

^a SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Boron monophosphide; Cubic gallium nitride; Silicon substrates; X ray diffraction

Indexed keywords

EID: 0000034217     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00364-0     Document Type: Article

References (4)

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4. M. Huang, W.Y. Ching, J. Phys. Chem. Solids 46 (1985) 977.