Surface modification of GaAs during argon ionic cleaning and nitridation: EELS, EPES and XPS studies

Surface Science

Volumn 566-568, Issue 1-3 PART 2, 2004, Pages 1158-1162

  Bideux, L ^a   Baca, D ^a,b   Gruzza, B ^a   Matolin, V ^b   Robert Goumet, C ^a  

^a LASMEA   (France)

^b CHARLES UNIVERSITY   (Czech Republic)

Author keywords

Electron energy loss spectroscopy (EELS); Gallium arsenide; Gallium nitride; Heterojunctions; Semiconductor semiconductor thin film structures; X ray photoelectron spectroscopy

Indexed keywords

ARGON; ELECTRON ENERGY LOSS SPECTROSCOPY; GALLIUM NITRIDE; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; PUMPING (LASER); SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACE TREATMENT; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FULL WIDTH AT A HALF MAXIMUM (FWHM); NITRIDATION; OPTOELECTRONIC APPLICATIONS; SEMICONDUCTOR-SEMICONDUCTOR THIN FILM STRUCTURES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4544222304     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.06.076     Document Type: Article

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