Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD

Journal of Crystal Growth

Volumn 169, Issue 1, 1996, Pages 185-189

  Hashimoto, Tadao ^a   Imafuji, Osamu ^a   Ishida, Masahiro ^a   Terakoshi, Yoshitami ^b   Sugino, Takashi ^b   Yoshikawa, Akio ^a   Itoh, Kunio ^a   Shirafuji, Junji ^b  

^a PANASONIC CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; CRYSTAL GROWTH; CRYSTAL STRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; SUBLIMATION; TEMPERATURE; X RAY DIFFRACTION;

ATOMIC DISPLACEMENT; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; WURTZITE GALLIUM NITRIDE; ZINC BLENDE GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030286202     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00477-0     Document Type: Article

References (10)

1. S. Nakamura, M. Senoh and T. Mukai, Jpn. J. Appl. Phys. 32 (1993) L8.
2. I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike, Jpn. J. Appl. Phys. 34 (1995) L1517.
3. T. Egawa, Y. Murata, T. Jinbo and M. Umeno, Tech. Digest of Int. Electron Devices Meeting (1995) 1005.
4. S. Strite, J. Ruan, Z. Li, A. Salvador, H. Chen, D.J. Smith, W.J. Choyke and H. Morkoç, J. Vac. Sci. Technol. B 9 (1991) 1924.
5. S. Fujieda and Y. Matsumoto, Jpn. J. Appl. Phys. 30 (1991) L1665.
6. J.N. Kuznia, J.W. Yang, Q.C. Chen, S. Krishnankutty, M. Asif Khan, T. George and J. Frietas, Jr., Appl. Phys. Lett. 65 (1994) 2407.
7. M.J. Paisly, Z. Sitar, J.B. Posthill and R.F. Davis, J. Vac. Sci. Technol. A 7 (1989) 701.
8. R.C. Powell, G.A. Tomasch, Y.W. Kim, J.A. Thornton and J.E. Greene, Mater. Res. Soc. Symp. Proc. 162 (1990) 525.
9. R.S. Mitchell, Z. Krist. 109 (1958) 1.
10. S. Strite, M.E. Lin and H. Morkoç, Thin Solid Films 231 (1993) 197.