Effects of self-heating on performance degradation in AlGaN/GaN-based devices

IEEE Transactions on Electron Devices

Volumn 56, Issue 10, 2009, Pages 2178-2185

  Benbakhti, Brahim ^a   Soltani, Ali ^b   Kalna, Karol ^a   Rousseau, Michel ^b   De Jaeger, Jean Claude ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

AlGaN GaN; Electrothermal modeling; Raman spectroscopy; Self heating

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC FIELDS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; RAMAN SPECTROSCOPY; SAPPHIRE; SILICON CARBIDE; SUBSTRATES; TEMPERATURE MEASUREMENT;

ALGAN/GAN; DIFFERENT SUBSTRATES; ELECTRO-THERMAL MODEL; ELECTRON DRIFT VELOCITY; PERFORMANCE DEGRADATION; SAPPHIRE SUBSTRATES; SELF-HEATING; SURFACE TEMPERATURES;

SILICON COMPOUNDS;

EID: 70350046760     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2028400     Document Type: Article

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