Analysis of thermal effect influence in gallium-nitride-based TLM structures by means of a transport-thermal modeling

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2237-2242

  Benbakhti, Brahim ^a   Rousseau, Michel ^a   Soltani, Ali ^a   De Jaeger, Jean Claude ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Finite element method; GaN; Self heating; Transport thermal model

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; FINITE ELEMENT METHOD; GALLIUM NITRIDE; THERMAL EFFECTS; TRANSPORT PROPERTIES;

GALLIUM NITRIDE POWER APPLICATIONS; OPERATING TEMPERATURE; SELF-HEATING; TRANSPORT THERMAL MODELS;

TRANSMISSION LINE THEORY;

EID: 33947144625     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.881014     Document Type: Article

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