On the substrate thermal optimization in SiC-based backside-mounted high-power GaN FETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 7, 2007, Pages 1744-1752

  Cappelluti, Federica ^a   Furno, Mauro ^a   Angelini, Annamaria ^a   Bonani, Fabrizio ^a   Pirola, Marco ^a   Ghione, Giovanni ^a  

^a POLITECNICO DI TORINO   (Italy)

Author keywords

GaN; Power modulation doped field effect transistors (MODFET); Semiconductor device thermal factors; SiC

Indexed keywords

POWER MODULATION-DOPED FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR DEVICE THERMAL FACTORS; THERMAL OPTIMIZATION;

HEAT RESISTANCE; INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34447316426     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.899380     Document Type: Article

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