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Volumn 47, Issue 8, 2003, Pages 1297-1309

Two-dimensional hydrodynamic model including inertia effects in carrier momentum for power millimetre-wave semi-conductor devices

Author keywords

Device modelling; Energy transport model; Hydrodynamic model; Monte Carlo model

Indexed keywords

COMPUTER SIMULATION; ENERGY TRANSFER; HYDRODYNAMICS; MATHEMATICAL MODELS; MONTE CARLO METHODS; TOPOLOGY;

EID: 0037598584     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00061-3     Document Type: Article
Times cited : (7)

References (22)
  • 1
    • 0032123104 scopus 로고    scopus 로고
    • A Ku-band T-shaped gate GaAs power MESFET with high breakdown voltage for satellite communications
    • Lee J.L., Kim H., Mun J.K., Maeng S.J. A Ku-band T-shaped gate GaAs power MESFET with high breakdown voltage for satellite communications. IEEE Electron. Dev. Lett. 19(July):1998;250-252.
    • (1998) IEEE Electron. Dev. Lett. , vol.19 , Issue.JULY , pp. 250-252
    • Lee, J.L.1    Kim, H.2    Mun, J.K.3    Maeng, S.J.4
  • 4
    • 0025238126 scopus 로고
    • MODFET 2D-hydrodynamic energy modeling: Optimization of subquarter-micron-gate structures
    • Shawki T., Salmer G., El-Sayed O. MODFET 2D-hydrodynamic energy modeling: optimization of subquarter-micron-gate structures. IEEE Trans. Electron. Dev. ED-37(January):1990;21-30.
    • (1990) IEEE Trans. Electron. Dev. , vol.ED-37 , Issue.JANUARY , pp. 21-30
    • Shawki, T.1    Salmer, G.2    El-Sayed, O.3
  • 5
    • 0030164608 scopus 로고    scopus 로고
    • Electromagnetic wave effects on microwave transistors using a full-wave time-domain model
    • Alounaidi M.A., Sahel Imtiaz S.M., El-Ghazaly S.M. Electromagnetic wave effects on microwave transistors using a full-wave time-domain model. IEEE Trans. Microwave Theory Tech. MTT-44(June):1996;799-808.
    • (1996) IEEE Trans. Microwave Theory Tech. , vol.MTT-44 , Issue.JUNE , pp. 799-808
    • Alounaidi, M.A.1    Sahel Imtiaz, S.M.2    El-Ghazaly, S.M.3
  • 7
    • 0031145998 scopus 로고    scopus 로고
    • Simulation of submicron double-heterojunction high electron mobility transistors with MINIMOS-NT
    • Simlinger T., Brech H., Grave T., Selberherr S. Simulation of submicron double-heterojunction high electron mobility transistors with MINIMOS-NT. IEEE Trans. Electron. Dev. ED-44:1997;700-707.
    • (1997) IEEE Trans. Electron. Dev. , vol.ED-44 , pp. 700-707
    • Simlinger, T.1    Brech, H.2    Grave, T.3    Selberherr, S.4
  • 9
    • 0027594255 scopus 로고
    • Monte Carlo Study of a 50 nm-dual-gate HEMT providing against short-channel effects
    • Dolfus P., Hesto P. Monte Carlo Study of a 50 nm-dual-gate HEMT providing against short-channel effects. Solid State Electron. 36(May):1993;711-715.
    • (1993) Solid State Electron. , vol.36 , Issue.MAY , pp. 711-715
    • Dolfus, P.1    Hesto, P.2
  • 11
    • 0022776857 scopus 로고
    • Multi-dimensional discretization scheme for a hydrodynamic model of semiconductor devices
    • Rudan M., Odeh F. Multi-dimensional discretization scheme for a hydrodynamic model of semiconductor devices. COMPEL. 5:1986;149-183.
    • (1986) COMPEL , vol.5 , pp. 149-183
    • Rudan, M.1    Odeh, F.2
  • 12
    • 0027578491 scopus 로고
    • A new stable method for linearization of discretized basic semiconductor equations
    • Obrecht M.S. A new stable method for linearization of discretized basic semiconductor equations. Solid State Electron. 36:1993;643-648.
    • (1993) Solid State Electron. , vol.36 , pp. 643-648
    • Obrecht, M.S.1
  • 13
    • 0000426129 scopus 로고
    • A streamline-upwinding/Petrov-Galerkin method forthe hydrodynamic semiconductor device model
    • Jiang X. A streamline-upwinding/Petrov-Galerkin method forthe hydrodynamic semiconductor device model. Math. Models Meth. Appl. Sci. 5:1995;659-681.
    • (1995) Math. Models Meth. Appl. Sci. , vol.5 , pp. 659-681
    • Jiang, X.1
  • 14
    • 0026107291 scopus 로고
    • Solution of hydrodynamic device model using high-order nonoscillatory shock capturing algorithms
    • Fatemi E., Jerome J., Osker S. Solution of hydrodynamic device model using high-order nonoscillatory shock capturing algorithms. IEEE Trans. CAD. 10:1991;232-244.
    • (1991) IEEE Trans. CAD , vol.10 , pp. 232-244
    • Fatemi, E.1    Jerome, J.2    Osker, S.3
  • 15
    • 0034450587 scopus 로고    scopus 로고
    • Extended hydrodynamic model of carrier transport in semiconductors
    • Anile M., Romano V., Russo G. Extended hydrodynamic model of carrier transport in semiconductors. SIAM J. Appl. Math. 2000;61.
    • (2000) SIAM J. Appl. Math. , pp. 61
    • Anile, M.1    Romano, V.2    Russo, G.3
  • 16
    • 35949025517 scopus 로고
    • The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
    • Jacobini C., Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Mod. Phys. 55:1983;645-705.
    • (1983) Rev. Mod. Phys. , vol.55 , pp. 645-705
    • Jacobini, C.1    Reggiani, L.2
  • 17
    • 0035695883 scopus 로고    scopus 로고
    • An analytical expression of thermal diffusion coefficient for the hydrodynamic simulation of semiconductor devices
    • Tang T.W., Wang X., Gan H., Ieong M. An analytical expression of thermal diffusion coefficient for the hydrodynamic simulation of semiconductor devices. VLSI DESIGN. 13(1-4):2001;131-134.
    • (2001) VLSI DESIGN , vol.13 , Issue.1-4 , pp. 131-134
    • Tang, T.W.1    Wang, X.2    Gan, H.3    Ieong, M.4
  • 20
    • 0000005482 scopus 로고
    • Bi-CGSTAB: A fast and smoothly nonsymmetric linear systems
    • Van der Vorst H.A. Bi-CGSTAB: a fast and smoothly nonsymmetric linear systems. SIAM J. Sci. Stat. Comput. 13:1992;631-644.
    • (1992) SIAM J. Sci. Stat. Comput. , vol.13 , pp. 631-644
    • Van der Vorst, H.A.1
  • 22
    • 84925794148 scopus 로고
    • Techniques for small-signal analysis of semiconductor devices
    • Laux S.E. Techniques for small-signal analysis of semiconductor devices. IEEE Trans. Electron Dev. ED-32:1985;2028-2037.
    • (1985) IEEE Trans. Electron Dev. , vol.ED-32 , pp. 2028-2037
    • Laux, S.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.