Physical study of the avalanche breakdown phenomenon in HEMTs

Solid-State Electronics

Volumn 49, Issue 4, 2005, Pages 535-544

  Elkhou, M ^a   Rousseau, M ^a   Gerard, H ^a   De Jaeger, J C ^a  

^a Institut d'Electronique   (France)

Author keywords

Avalanche breakdown phenomenon; Hydrodynamic modelling; Pseudomorphic HEMTs; Single and double step gate recess

Indexed keywords

AMPLIFICATION; AVALANCHE DIODES; COMPUTER SIMULATION; CONCENTRATION (PROCESS); ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GATES (TRANSISTOR); HYDRODYNAMICS; MATHEMATICAL MODELS; OPTIMIZATION; PARAMETER ESTIMATION;

AVALANCHE BREAKDOWN PHENOMENA; HYDRODYNAMIC MODELING; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (HEMT); SINGLE AND DOUBLE STEP GATE RECESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 13644267088     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.01.003     Document Type: Article

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