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Volumn 38, Issue 11, 2009, Pages 2314-2322

Investigation of the interfaces in ni-FUSI/Hf-based/Si and Ni-FUSI/SiO 2/Si stacks by physical and electrical characterization techniques

(1) Tan, S Y a

a CHINESE CULTURE UNIVERSITY (Taiwan)

Author keywords

Electrical property; HfO 2; HfSiO; High k dielectric; Interfacial property; Nickel silicide; Phase transformation

Indexed keywords

ELECTRICAL PROPERTY; HFO 2; HFSIO; HIGH-K DIELECTRIC; INTERFACIAL PROPERTY; NICKEL SILICIDE; PHASE TRANSFORMATION;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; INTERMETALLICS; LOGIC GATES; NICKEL; NICKEL ALLOYS; PERSONAL DIGITAL ASSISTANTS; PHASE INTERFACES; PHASE TRANSITIONS; POLYMER BLENDS; SEMICONDUCTING SILICON; SILICIDES; SURFACE CHEMISTRY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC PROPERTIES;

EID: 70349873522 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0955-4 Document Type: Article

Times cited : (4)

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