Physical and electrical characterization of Ni-Si Phase transformation

Thin Solid Films

Volumn 517, Issue 3, 2008, Pages 1186-1190

  Tan, S Y ^a   Chen, Chih Wei ^b   Chen, I Tse ^a   Feng, Chu Wei ^a  

^a CHINESE CULTURE UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Electrical property; Nickel silicide; Phase transformation; Silicidation

Indexed keywords

ANNEALING; ATOMIC SPECTROSCOPY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; NICKEL; NICKEL ALLOYS; PHOTOELECTRON SPECTROSCOPY; POLYMER BLENDS; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON; SILICON COMPOUNDS; THERMODYNAMIC STABILITY; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURES; ATOMIC FORCES; CAPACITANCE VOLTAGES; DURING PHASE; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; GATE DIELECTRIC LAYERS; GATE DIELECTRIC MATERIALS; HIGH RESISTIVITIES; HIGH TEMPERATURES; IN PROCESSING; INTEGRATION PROCESSES; LOW RESISTIVITIES; MORPHOLOGICAL PROPERTIES; NI SILICIDES; NICKEL SILICIDE; PHASE CHARACTERISTICS; PHASE TRANSFORMATION; PHASE TRANSFORMATIONS; PHYSICAL AND ELECTRICAL CHARACTERIZATIONS; SILICIDATION; SILICIDE PHASES; SOLID-STATE REACTIONS; THERMAL STABILITIES; X-RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

PHASE STABILITY;

EID: 56649120578     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.06.087     Document Type: Article

References (12)

1. Lavoie C., Purtell R., Cabral C., d'Heurle F.M., and Harper J.M.E. Electrochem. Soc. Symp. 2002/11 (2002) 455
2. Kazuya O., Kanna A., Akira H., and Yoshiaki T. Mater. Res. Soc. Symp. Proc. 717 (2002) 77
3. Tan S.Y., Sung C.L., and Wu W.F. J. Mater. Sci.: Mater. Electron. 18 (2007) 847
4. Tan S.Y., Chiu H.-C., and Chun-Yen H. Mater. Res. Soc. Symp. Proc 958 (2007) 197
5. Iwai H., Ohgura T., and Ohmi S. Microelectron. Eng. 60 (2002) 157
6. Hokazono A., Ohuchi K., Takayanagi M., Watanabe Y., Magoshi S., Kato Y., Shimizu T., et al. IEDM Tech. Dig. (2002) 639
7. Lu J.P., Miles D., Zhao J., Gurba A., Xu Y., Lin C., Hewson M., et al. IEDM Tech. Dig. (2002) 371
8. Lauwers A., Steegen A., de potter M., Lindsay R., Satta A., Bender H., and Maex K. J. Vac. Sci. Technol., B 19 (2001) 2026
9. Lauwers A., de Potter M., Chamirian O., Lindsay R., Demeurisse C., Vrancken C., and Maex K. Microelectron. Eng. 64 (2002) 131
10. Heurle F., Petersson C.S., Baglin J.E.E., Placa S.J., and Wong C.Y. J. Appl. Phys. 55 (1984) 4208
11. Kittl J.A., Lauwers A., Chamirian O., Pawlak M.A., Van Dal M., Akheyar A., De Potter M., Kottantharayil A., Pourtois G., Lindsay R., and Maex K. Mater. Res. Soc., Symp. Proc. 810 (2004) 31
12. Kittl J.A., Lauwers A., Pawlak M.A., Van Dal M., Veloso A., Anil K.G., Pourtois G., Demeurisse C., Schram T., Brijs B., De Potter M., Vrancken C., and Maex K. Microelectron. Eng. 82 (2005) 441