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Volumn 958, Issue , 2007, Pages 197-204

Formation of a thermally stable NiSi FUSI gate electrode by a novel integration process

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; NICKEL; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

EID: 34347228147     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (14)
  • 1
    • 34347216820 scopus 로고    scopus 로고
    • The International Technology Roadmap for Semiconductors
    • The International Technology Roadmap for Semiconductors, 2005.
    • (2005)
  • 2
    • 34347221637 scopus 로고    scopus 로고
    • VLSI Symp
    • C.Hobbs et al., VLSI Symp. Tech. Dig., p. 9(2003).
    • (2003) Tech. Dig , pp. 9
    • Hobbs, C.1
  • 3
    • 34347241065 scopus 로고    scopus 로고
    • VLSI Symp
    • K. Shiraishi et al., VLSI Symp. Tech. Dig., p. 108(2004).
    • (2004) Tech. Dig , pp. 108
    • Shiraishi, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.