Improvement of SiO2 /4H-SiC interface properties by oxidation using hydrogen peroxide

Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

  Palmieri, R ^a   Radtke, C ^a   Boudinov, H ^a   Da Silva, E F ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

LOW-K DIELECTRIC; SILICA; SILICON CARBIDE;

4H-SIC SUBSTRATE; CONDUCTION BAND EDGE; ELECTRICALLY ACTIVE DEFECTS; INTERFACE PROPERTY; INTERFACE REGIONS; INTERFACE TRAP DENSITY; OXIDE GROWTH; THERMAL GROWTH;

INDIUM COMPOUNDS;

EID: 70349498810     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3231923     Document Type: Article

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