Trapping of majority carriers in SiO2/4H-SiC structures

Journal of Physics D: Applied Physics

Volumn 42, Issue 12, 2009, Pages

  Palmieri, R ^a   Radtke, C ^a   Silva, M R ^a   Boudinov, H ^a   Da Silva Jr , E F ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; DOPED SAMPLE; EFFECTIVE OXIDE CHARGE; ELECTRICAL CHARACTERISTIC; EPITAXIAL WAFERS; HIGH FREQUENCY HF; I-V MEASUREMENTS; INTERFACE CHARACTERISTIC; INTERFACE OXIDE; MAJORITY CARRIERS; METAL OXIDE SEMICONDUCTOR STRUCTURES; NITROGEN ATMOSPHERES; OFF-AXIS; OXIDATION PROCESS; P-TYPE; THREE ORDERS OF MAGNITUDE;

OXYGEN; SILICON CARBIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70249084186     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/12/125301     Document Type: Article

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