Presence and resistance to wet etching of silicon oxycarbides at the SiO2 /SiC interface

Electrochemical and Solid-State Letters

Volumn 11, Issue 9, 2008, Pages

  Corr̂a, Silma A ^a   Radtke, Cláudio ^a   Soares, Gabriel V ^b   Baumvol, Israel J R ^a,b   Krug, Cristiano ^a   Stedile, Fernanda C ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL OXYGEN DEMAND; HEALTH; NONMETALS; NUCLEAR REACTORS; OXIDATION; SILICON CARBIDE;

ELECTROCHEMICAL SOCIETY (ECS); NUCLEAR REACTION ANALYSIS (NRA); OXIDATION TEMPERATURES; OXIDE GROWTH; POLYTYPE (CO); RESIDUAL SILICON; SILICON OXYCARBIDES; SURFACE TERMINATIONS; WET-ETCH;

SILICON;

EID: 48249147397     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2949117     Document Type: Article

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