Nano-electronics of high κ dielectrics on ingaas for key technologies beyond Si CMOS

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2009, Pages 94-99

  Lin, T D ^a   Chang, P ^a   Chiu, H C ^a   Chang, Y C ^a   Lin, C A ^a   Chang, W H ^a   Lee, Y J ^a   Chang, Y H ^a   Huang, M L ^a   Kwo, J ^a   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; DEVICE PERFORMANCE; FERMI-LEVEL UNPINNING; KEY TECHNOLOGIES; MOS-FET; SELF-ALIGNED; SI CMOS;

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; GADOLINIUM; HAFNIUM COMPOUNDS; INDIUM PHOSPHIDE;

SEMICONDUCTING INDIUM;

EID: 70349487965     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2009.5012451     Document Type: Conference Paper

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