Progress in extending immersion lithography for the 32 nm node and beyond

Japanese Journal of Applied Physics

Volumn 48, Issue 6 PART 2, 2009, Pages

  Sewell, Harry ^a   Chen, Alek ^b   Finders, Jo ^c   Dusa, Mircea ^a  

^a ASML US Inc   (United States)

^b ASML Taiwan Ltd   (Taiwan)

^c ASML   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

32-NM NODE; CRITICAL DIMENSION CONTROL; DOUBLE PATTERNING; EUV LITHOGRAPHY; IMMERSION LITHOGRAPHY; K FACTOR; NEW HIGH; NUMERICAL APERTURE; OPTICAL LITHOGRAPHY; OVERLAY ACCURACY; PROCESS WINDOW; SEMICONDUCTOR INDUSTRY; WATER BASED;

NANOTECHNOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE; SPECIFICATIONS; ULTRAVIOLET DEVICES;

PHOTOLITHOGRAPHY;

EID: 70249134245     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.06FA01     Document Type: Article

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