Towards 3nm overlay and critical dimension uniformity: An integrated error budget for double patterning lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6924, Issue , 2008, Pages

  Arnold, William H ^a  

^a ASML US Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

(OTDR) TECHNOLOGY; ARF IMMERSION LITHOGRAPHY; CRITICAL DIMENSION UNIFORMITY (CDU); DEVICE SENSITIVITY; DOUBLE PATTERNING; ERROR BUDGETING; EXTREME PRESSURE (EP); NAND FLASH; OPTICAL MICRO LITHOGRAPHY; PARAMETER VARIATIONS; WATER-BASED;

COMPUTER NETWORKS; MICROFLUIDICS; PHOTORESISTS; SODIUM; TECHNOLOGY;

LITHOGRAPHY;

EID: 45449106995     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.782311     Document Type: Conference Paper

References (10)

1. W.H.Arnold, M.V. Dusa, J. Finders, Proc. SPIE, Vol. 6518-01, 2007
2. A. Wong et al, Proc. SPIE, Vol. 4000, pp184-191, 2000
3. G. Han et al, Proc. SPIE, 6518-08, 2007
4. W.H. Arnold, J. Greeneich, Microelectronics Interface, 1993
5. M. van de Kerkhof et al, Proc. SPIE 6924-67, 2008
6. J. De Klerk et al, Proc. SPIE, 6924-60, 2008
7. J. Finders, M. Dusa, Microlithography World, February 2008
8. J. Finders et al, Proc. SPIE, 6924-7, 2008
9. R. deKruif, et al, European Mask Lithography Conference, 2008
10. K. Bubke et al, SPIE Photomask Symposium, 2007