22nm half-pitch patterning by CVD Spacer Self Alignment Double Patterning (SADP)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6924, Issue , 2008, Pages

  Bencher, Christopher ^a   Yongmei, Chen ^a   Huixiong, Dai ^a   Montgomery, Warren ^b   Huli, Lior ^b  

^a APPLIED MATERIALS INC   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

APF ; Frequency doubling; SADP; SaDPT; Self aligned double patterning; Spacer mask

Indexed keywords

300 MM WAFERS; CONVENTIONAL LITHOGRAPHY; CRITICAL DIMENSION UNIFORMITY (CDU); DOUBLE PATTERNING; HARD MASKS; INTEGRATION SCHEMES; LINE DENSITY; OPTICAL MICRO LITHOGRAPHY; PATTERNING TECHNIQUES; PITCH PATTERNING; POSITIVE-TONE; SELF ALIGNED (SA); SELF ALIGNMENT (SA); SPACE ARRAYS;

EID: 45449086042     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772953     Document Type: Conference Paper

References (2)

1. W. Jung et al., "Patterning with amorphous carbon spacer for expanding the resolution limit of current lithography tool", Proc. SPIE Vol. 6520, 65201C, (2007)
2. Christopher Borst, et al., "Driving Metallization Dimensions to Sub-30nm using Immersion Lithography and a SelfAligned Double Patterning Scheme", 24th Proc. Advanced Metallization Conference, Albany ,NY (2007)