Fabrication of vertically aligned Si nanowires and their application in a gated field emission device

Applied Physics Letters

Volumn 88, Issue 1, 2006, Pages

  She, J C ^a   Deng, S Z ^a   Xu, N S ^a   Yao, R H ^a   Chen, J ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTALLINE MATERIALS; ETCHING; FIELD EFFECT SEMICONDUCTOR DEVICES; MECHANISMS; NANOSTRUCTURED MATERIALS; PLASMAS; THRESHOLD ELEMENTS;

ANISOTROPIC PLASMA ETCHING; EMISSION CURRENT DENSITY; FIELD EMISSION DEVICES; SINW-BASED FIELD EMISSION MICROTRIODES;

SILICON;

EID: 33645549643     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2162692     Document Type: Article

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