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Volumn 145, Issue 4, 1998, Pages 1257-1262

Reactive ion etching of silicon containing polynorbornenes

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DIELECTRIC MATERIALS; FLUORINE COMPOUNDS; OXYGEN; PLASMAS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0032048041     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838448     Document Type: Article
Times cited : (9)

References (25)
  • 7
    • 11744290859 scopus 로고    scopus 로고
    • R. Allen, R. Sooriyakumaran, J. Opitz, G. Wallraff, M. Gregory, R. DiPietro, B. Breyta, D. Hofer, R. Junz, S. Jayaraman, R. Shick, B. Goodall, U. Okoroanyanwu, and G. Wilson, in SPIE Proc., XIII, 2724 (1996). SPIE-Int. Soc. Opt. Eng.
    • SPIE-Int. Soc. Opt. Eng.
  • 20
    • 5644251598 scopus 로고
    • E. M. Middlesworth and H. Massoud, Editors, PV 95-5, The Electrochemical Society Proceedings Series, Pennington, NJ
    • Y. T. Lii and J. T. Wetzel, in ULSI Science and Technology, E. M. Middlesworth and H. Massoud, Editors, PV 95-5, p 266, The Electrochemical Society Proceedings Series, Pennington, NJ (1995).
    • (1995) ULSI Science and Technology , pp. 266
    • Lii, Y.T.1    Wetzel, J.T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.