Band line-up determination at p- and n-type AI/4H-SiC schottky interfaces using photoemission spectroscopy

Journal of Applied Physics

Volumn 94, Issue 6, 2003, Pages 3931-3938

  Kohlscheen, J ^a,c   Emirov, Y N ^a   Beerbom, M M ^a   Wolan, J T ^a   Saddow, S E ^a   Chung, G ^b   MacMillan, M F ^b   Schlaf, R ^a  

^a University of South Florida   (United States)

^b Sterling Semiconductor   (United States)

^c AIRBUS OPERATIONS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BINDING ENERGY; DEPOSITION; FERMI LEVEL; INTERFACES (MATERIALS); METALLIC FILMS; PHOTOEMISSION;

PHOTOEMISSION SPECTROSCOPY;

SILICON CARBIDE;

EID: 0141955847     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1599050     Document Type: Article

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