Structural and optical characterization of Eu-implanted GaN

Journal of Physics D: Applied Physics

Volumn 42, Issue 16, 2009, Pages

  Lorenz, K ^a,b   Barradas, N P ^a,b   Alves, E ^a,b   Roqan, I S ^c   Nogales, E ^c,e   Martin, R W ^c   O'Donnell, K P ^c   Gloux, F ^d   Ruterana, P ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^d UNIVERSITÉ DE CAEN   (France)

^e UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CATHODOLUMINESCENCE SPECTROSCOPY; ELEVATED TEMPERATURE; FLUENCE RANGE; FLUENCES; HIGH-TEMPERATURE ANNEALING; IMPLANTATION DAMAGE; IMPLANTATION FLUENCE; OPTICAL ACTIVATION; OPTICAL CHARACTERIZATION; RED-LIGHT EMISSION; ROOM TEMPERATURE; RUTHERFORD BACK-SCATTERING SPECTROMETRY; WAVELENGTH DISPERSIVE X-RAYS;

ANNEALING; CHARACTERIZATION; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT TRANSMISSION; OPTICAL EMISSION SPECTROSCOPY; OPTICAL MICROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; WAVELENGTH DISPERSIVE SPECTROSCOPY;

EUROPIUM;

EID: 70149100381     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/16/165103     Document Type: Article

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