Structural disorder in ion-implanted AlxGa1-xN

Applied Physics Letters

Volumn 80, Issue 5, 2002, Pages 787-789

  Kucheyev, S O ^a   Williams, J S ^a   Zou, J ^b   Li, G ^c   Jagadish, C ^a   Manasreh, M O ^d   Pophristic, M ^e   Guo, S ^e   Ferguson, I T ^e  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

^c Ledex Corporation   (Taiwan)

^d University of New Mexico   (United States)

^e EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; AL-CONCENTRATION; ALGAN; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DISORDER LEVELS; DYNAMIC ANNEALING; ION DOSE; ION-BEAM-INDUCED AMORPHIZATION; ROOM TEMPERATURE; RUTHERFORD BACKSCATTERING/CHANNELING; SATURATION REGIME; STRUCTURAL DAMAGES; STRUCTURAL DISORDERS;

ALUMINUM; GALLIUM NITRIDE; HEAVY IONS; TRANSMISSION ELECTRON MICROSCOPY;

ION BOMBARDMENT;

EID: 79956041338     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1445478     Document Type: Article

References (14)

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