A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 °C

Materials Science and Engineering: B

Volumn 146, Issue 1-3, 2008, Pages 204-207

  Gloux, F ^a   Ruterana, P ^a   Lorenz, K ^b   Alves, E ^b  

^a CNRS   (France)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

GaN; Ion implantation; Rare earth; Structural defects; Transmission electron microscopy

Indexed keywords

CRYSTALLOGRAPHY; ION IMPLANTATION; NANOCRYSTALLINE MATERIALS; RARE EARTH COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLOGRAPHIC DAMAGE; IMPLANTATION TEMPERATURE; RARE EARTH IONS; ROOM TEMPERATURE (RT); STRUCTURAL DEFECTS;

GALLIUM NITRIDE;

EID: 37349077183     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.07.019     Document Type: Article

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