Rare-earth-doped GaN: Growth, properties, and fabrication of electroluminescent devices

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 4, 2002, Pages 749-766

  Steckl, Andrew J ^a,b   Heikenfeld, Jason C ^a,b   Lee, Dong Seon ^a,b   Garter, Michael J ^b   Baker, Christopher C ^a,b   Wang, Yongqiang ^b   Jones, Robert ^b  

^a IEEE   (United States)

^b University of Cincinnati   (United States)

Author keywords

Channel waveguides; Electroluminescent devices; Flat panel displays; Gallium nitride; Molecular beam epitaxy; Optical telecommunications; Rare earths

Indexed keywords

BRIGHTNESS; CHANNEL WAVEGUIDES; IMPACT EXCITATION; INFRARED EMISSION; SOLID-SOURCE MOLECULAR BEAM EPITAXY;

FLAT PANEL DISPLAYS; GALLIUM NITRIDE; HOT CARRIERS; INDUCTIVELY COUPLED PLASMA; MOLECULAR BEAM EPITAXY; NITROGEN; OPTICAL COMMUNICATION; PLASMA ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

LUMINESCENT DEVICES;

EID: 0036662422     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.801690     Document Type: Article

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