The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation

Journal of Applied Physics

Volumn 98, Issue 1, 2005, Pages

  Whelan, S ^a   Kelly, M J ^a   Gwilliam, R ^b   Jeynes, C ^b   Bongiorno, C ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DEVICES; HIGH-TEMPERATURE IMPLANTATION; SUBSTRATE IMPLANT TEMPERATURE; SUBSTRATE TEMPERATURE;

ANNEALING; CRYSTAL DEFECTS; ION IMPLANTATION; MAGNESIUM PRINTING PLATES; RADIATION DAMAGE; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; TEMPERATURE MEASUREMENT;

GALLIUM NITRIDE;

EID: 22944446112     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1940142     Document Type: Article

References (8)

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