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Optical Materials

Volumn 28, Issue 6-7, 2006, Pages 750-758

High temperature annealing of rare earth implanted GaN films: Structural and optical properties

(14) Lorenz, K a Wahl, U a Alves, E a Nogales, E b Dalmasso, S b Martin, R W b O'Donnell, K P b Wojdak, M c Braud, A c Monteiro, T d Wojtowicz, T c Ruterana, P c Ruffenach, S e Briot, O e

a INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

b UNIVERSITY OF STRATHCLYDE (United Kingdom)

c UNIVERSITÉ DE CAEN (France)

d UNIVERSITY OF AVEIRO (Portugal)

e UNIV MONTPELLIER (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; OPTICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

NANOCRYSTALLINE; POST-IMPLANT HIGH TEMPERATURE; ROOM TEMPERATURE;

THIN FILMS;

EID: 33644972614 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/j.optmat.2005.09.015 Document Type: Conference Paper

Times cited : (50)

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