Amorphization processes in Au ion irradiated GaN at 150-300 K

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 218, Issue 1-4, 2004, Pages 427-432

  Jiang, W ^a   Weber, W J ^a   Wang, L M ^b   Sun, K ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Defect microstructures; Disorder accumulation; GaN; Ion beam irradiation

Indexed keywords

AMORPHIZATION; CRYSTAL DEFECTS; GALLIUM NITRIDE; GOLD; MICROSTRUCTURE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT MICROSTRUCTURES; DISORDER ACCUMULATION; SURFACE DEFECTS;

ION BOMBARDMENT;

EID: 2342588697     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.12.012     Document Type: Conference Paper

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