SCOPUS 정보 검색 플랫폼

Optical Materials

Volumn 28, Issue 6-7, 2006, Pages 738-741

TEM investigation of Tm implanted GaN, the influence of high temperature annealing

(5) Wojtowicz T a Gloux, F a Ruterana, P a Lorenz, K b Alves, E b

a UNIVERSITÉ DE CAEN (France)

b INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; RAPID THERMAL ANNEALING; STACKING FAULTS; THULIUM; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURE; HIGH TEMPERATURE ANNEALING; ROOM TEMPERATURE;

GALLIUM NITRIDE;

EID: 33644905273 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/j.optmat.2005.09.012 Document Type: Conference Paper

Times cited : (16)

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