Ballistic calculation of nonequilibrium Green's function in nanoscale devices using finite element method

Journal of Physics D: Applied Physics

Volumn 42, Issue 10, 2009, Pages

  Kurniawan, O ^a   Bai, P ^a   Li, E ^a  

^a INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC DEVICES; BALLISTIC TRANSPORTS; CHANNEL LENGTH; DOUBLE-GATE MOSFET DEVICES; ELECTRON DENSITIES; FERMI FUNCTIONS; FINITE ELEMENT FORMULATIONS; FINITE-DIFFERENCE DISCRETIZATION; FLOATING BOUNDARY CONDITIONS; GATE CONTROL; LOCAL DENSITY OF STATE; NANOSCALE DEVICE; NON-EQUILIBRIUM GREEN'S FUNCTION; QUANTUM-MECHANICAL CALCULATION; QUANTUM-MECHANICAL SYSTEM; SOFTWARE USE; TRANSMISSION COEFFICIENTS; TRANSVERSE ENERGY;

BALLISTICS; DIFFERENTIAL EQUATIONS; GREEN'S FUNCTION; NANOSTRUCTURED MATERIALS; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM DOTS; TRANSPORT PROPERTIES;

FINITE ELEMENT METHOD;

EID: 70049118997     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/10/105109     Document Type: Article

References (44)

1. Intel http://www.intel.com
2. Frank D J, Laux S E and Fischetti M V 1992 IEDM Technical Digest (San Francisco, CA) p 553
3. Timp G et al 1999 IEDM Technical Digest (Washington, DC) p 55
4. Rahman A, Guo J, Datta S and Lundstrom M S 2003 IEEE Trans. Electron Devices 50 1853
5. Datta S 1989 Phys. Rev. B 40 5830
6. Datta S 2000 Superlatt. Microstruct. 28 253
7. Datta S 2005 Quantum Transport: Atom to Transistor (Cambridge, UK: Cambridge University Press)
8. Kadanoff L P and Baym G 1962 Quantum Statistical Mechanics (Reading, MA: Benjamin)
9. Keldysh L V 1965 Sov. Phys.-JETP 20 1018
10. Caroli C, Combescot R, Nozieres P and Saint-James D 1971 J. Phys. C: Solid State Phys. 4 916
11. Caroli C, Combescot R, Nozieres P and Saint-James D 1972 J. Phys. C: Solid State Phys. 5 21
12. Meir Y and Wingreen N S 1992 Phys. Rev. Lett. 68 2512
13. Datta S 1995 Electronic Transport in Mesoscopic Systems (Cambridge, UK: Cambridge University Press)
14. Ren Z, Venugopal R, Datta S and Lundstrom M 2001 IEDM Technical Digest (Washington, DC) p 541
15. Svizhenko A, Anantram M P, Govindan T R, Biegel B and Venugopal R 2002 J. Appl. Phys. 91 2343
16. Ren Z, Venugopal R, Goasguen S, Datta S and Lundstrom M S 2003 IEEE Trans. Electron Devices 50 1914
17. Lundstrom M and Ren Z 2002 IEEE Trans. Electron Devices 49 133
18. Venugopal R, Goasguen S, Datta S and Lundstrom M S 2004 J. Appl. Phys. 95 292
19. Luisier M, Schenk A and Fichtner W 2006 J. Appl. Phys. 100 043713
20. Xia T, Register L F and Banerjee S K 2003 IEEE Trans. Electron Devices 50 1511
21. Venugopal R, Ren Z and Lundstrom M S 2003 IEEE Trans. Nanotechnol. 2 135
22. Havu P, Havu V, Puska M J and Nieminen R M 2004 Phys. Rev. B 69 115325
23. http://geuz.org/gmshg
24. Wang J, Polizzi E and Lundstrom M 2004 J. Appl. Phys. 96 2192
25. Taylor J, Guo H and Wang J 2001 Phys. Rev. B 63 245407
26. Brandbyge M, Mozos J L, Ordejon P, Taylor J and Stokbro K 2002 Phys. Rev. B 65 165401
27. Xue Y, Datta S and Ratner M A 2002 Chem. Phys. 281 151
28. Zhang C, Zhang X-G, Krstic P S, Cheng H P, Butler W H and MacLaren J M 2004 Phys. Rev. B 69 134406
29. Zhang J, Hou S, Li R, Qian Z, Han R, Shen Z, Zhao X and Xue Z 2005 Nanotechnology 16 3057
30. Li R, Hou S, Qian Z, Shen Z, Zhao X and Xue Z 2007 Chem. Phys. 336 127
31. Jin J 1993 The Finite Element Method in Electromagnetics (New York: Wiley)
32. Polizzi E and Datta S 2003 Proc. IEEE-NANO (San Francisco, CA) vol 1 p 40
33. Lake R, Klimeck G, Bowen R C and Jovanovic D 1997 J. Appl. Phys. 81 7845
34. Lake R, Klimeck G, Bowen R C, Jovanovic D, Sotirelis P and Frensley W R 1998 VLSI Des. 6 9
35. Ren Z 2001 PhD Thesis Purdue University
36. Trellakis A, Galick A T, Pacelli A and Ravaioli U 1997 J. Appl. Phys. 81 7880
37. Venugopal R, Ren Z, Datta S and Lundstrom M S 2002 J. Appl. Phys. 92 3730
38. Rhew J-H, Ren Z and Lundstrom M S 2002 Solid-State Electron. 46 1899
39. Guo J and Lundstrom M S 2002 IEEE Trans. Electron Devices 49 1897
40. Laux S E, Kumar A and Fischetti M V 2004 J. Appl. Phys. 95 5545
41. Martinez A, Bescond M, Barker J R, Svizhenko A, Anantram M P, Millar C and Asenov A 2007 IEEE Trans. Electron Devices 54 2213
42. Liu Y, Neophytou N, Low T, Klimeck G and Lundstrom M S 2008 IEEE Trans. Electron Devices 55 866
43. Lundstrom M 2003 IEDM Technical Digest p 3311
44. FeMOS Finite Element Simulation of double-gate MOS transistor http://software.ihpc.a-star.edu.sg/projects/FeMos/FeMos.php