Electronic structure and spin-dependent tunneling conductance under a finite bias

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 13, 2004, Pages

  Zhang, C ^a   Zhang, X G ^b   Krstic P S ^b   Cheng, Hai Ping ^a   Butler, W H ^b,c   MacLaren, J M ^d  

^a University of Florida ^*  (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c University of Alabama   (United States)

^d Tulane University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ARTICLE; CALCULATION; CHEMICAL STRUCTURE; CONDUCTANCE; DENSITY FUNCTIONAL THEORY; ELECTRIC POTENTIAL; ELECTRONICS; MAGNETISM; POLARIZATION;

EID: 42749102649     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.134406     Document Type: Article

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