Temperature dependent behavior of Sn/p-InP Schottky barrier diodes

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 2, Issue 12, 2008, Pages 766-769

  Korucu, D ^a   Altindal, S ^a   Mammadov, T S ^b   Ozcelik S ^a  

^a GAZI UNIVERSITY   (Turkey)

^b INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

Barrier inhomogeneity; Gaussian distribution; Sn p InP SBDs; Temperature dependence

Indexed keywords

GAUSSIAN DISTRIBUTION; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

BARRIER INHOMOGENEITIES; INCREASING TEMPERATURES; RICHARDSON CONSTANT; SCHOTTKY BARRIER DIODE(SBD); TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT BEHAVIOR; THEORETICAL VALUES;

SCHOTTKY BARRIER DIODES;

EID: 69249103443     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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