Investigation on the barrier height and inhomogeneity of nickel silicide Schottky

Applied Surface Science

Volumn 252, Issue 12, 2006, Pages 4027-4032

  Huang, Shihua ^a   Lu, Fang ^b  

^a ZHEJIANG NORMAL UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

Annealing; I V characteristic; Nickel silicide; Schottky barrier inhomogeneities

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; NICKEL; PHASE TRANSITIONS; THERMIONIC EMISSION;

BARRIER HEIGHT; DOUBLE GAUSSIAN MODELS; NICKEL SILICIDE; SCHOTTKY BARRIER INHOMOGENEITIES; SINGLE GAUSSIAN;

SCHOTTKY BARRIER DIODES;

EID: 33646195948     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.07.057     Document Type: Article

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