Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (1 1 0) Si substrates

Journal of Crystal Growth

Volumn 311, Issue 3, 2009, Pages 809-813

  Arimoto, Keisuke ^a   Watanabe, Masato ^a   Yamanaka, Junji ^a   Nakagawa, Kiyokazu ^a   Sawano, Kentarou ^b   Shiraki, Yasuhiro ^b   Usami, Noritaka ^c   Nakajima, Kazuo ^c  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Planar defects; A3. Molecular beam epitaxy; B2. Semiconducting Si compounds

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SILICON ALLOYS; SURFACE MORPHOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

A1. PLANAR DEFECTS; A3. MOLECULAR BEAM EPITAXY; B2. SEMICONDUCTING SI COMPOUNDS; CROSS-SECTIONAL SCANNING; CRYSTAL LATTICE STRUCTURES; CRYSTALLINE MORPHOLOGIES; GAS-SOURCE MOLECULAR BEAM EPITAXIES; MICROTWIN; RECIPROCAL SPACE MAPS; SI SUBSTRATES; SI-GE FILMS; SIGE LAYERS; SURFACE INCLINATIONS; VICINAL SUBSTRATES;

SUBSTRATES;

EID: 59749086736     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.061     Document Type: Article

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