Characterization of CMOS sub-65 nm metallic contact by laser scattering: Thermal stability of Ni(Si1-xGex)

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2558-2562

  Arrazat, B ^a   Danel, A ^a   Nolot, E ^a   Favier, S ^b   Carron, V ^a   Nemouchi, F ^a   Hartmann, J M ^a   Rolland, G ^a   Vandelle, P ^a   Kermarrec, O ^b   Campidelli, Y ^b   Descombes, S ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Agglomeration; Germano silicide; Haze; Laser scattering; Segregation; Thermal stability

Indexed keywords

AGGLOMERATION; LIGHT SCATTERING; NICKEL COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SHEET RESISTANCE; SILICIDES; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

HAZE MEASUREMENT PERFORMANCES; LASER SCATTERING; PARTICLES DETECTION; WAFER SURFACE STATE;

CMOS INTEGRATED CIRCUITS;

EID: 34548843890     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.021     Document Type: Article

References (6)

1. x (X = 0 to 0.25) under rapid thermal annealing, in: 205th ECS Meeting Proceeding, vol. 7, 2004, pp. 1095-1106.
2. Lien C.-D., et al. Phys. Stat. Sol., index 81 (1984) 123
3. F. Holsteyns et al., Monitoring and qualification using comprehensive surface haze information, in: IEEE International Symposium on Semiconductor Manufacturing, 2003, pp. 378-381.
4. Perrin C., et al. J. Appl. Phys. 101 (2007)
5. Jamar T., et al. J. Appl. Phys., index 92 (2002) 7193
6. V. Carron et al., in: D. Harame et al. (Eds.), SiGe and Ge: Materials, Processing and Devices, Pennington, NJ, ECS trans. 3 (7) (2005) 643.