3X hole mobility enhancement in epitaxially grown SiGe PMOSFETs on (110) Si substrates with high k / metal gate for hybrid orientation technology

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 53-54

  Joshi, Sachin ^a   Dey, Sagnik ^a   Lee, Se Hoon ^a   Krug, Cristiano ^b   Na, Hoon Joo ^b   Sivasubramani, Prasanna ^b   Kirsch, Paul D ^b,c   Majhi, Prashant ^b,d   Wang, Wenqian ^a   Campion, Alan ^a   Banerjee, Sanjay K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b SEMATECH   (United States)

^c IBM   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47249123792     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373648     Document Type: Conference Paper

References (9)

1. P. Liu et al. VLSI Symposium 2006, pp. 18.3-1-2
2. Dey et al., JEM, Vol. 25, No. 8, pp 1607 - 1612, August 2006,
3. Joshi et al., accepted, JEM
4. Christine Ouyang et al, MRS 2006
5. M.A. Quevedo-Lopez et al., IEDM 2005
6. P. Zimmerman et al. IEDM 2006
7. Joshi et al, PCSI34, accepted, EDL,
8. Na et al, SISC 2006
9. Pinto et al, MRS 2007