Pore sealing of mesoporous silica low-k dielectrics by oxygen and argon plasma treatments

Microelectronic Engineering

Volumn 86, Issue 11, 2009, Pages 2241-2246

  Chang, Chih Chieh ^a   Pan, Fu Ming ^a   Chen, Ching Wen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Low k dielectric; Plasma treatment; Pore sealing

Indexed keywords

AR PLASMAS; ARGON PLASMA TREATMENT; ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; DIELECTRIC LAYER; GAS PRECURSORS; HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION; LOW K DIELECTRICS; LOW-K DIELECTRIC; MESOPOROUS; MESOPOROUS LAYERS; MESOPOROUS SILICA; OXIDE LAYER; PLASMA TREATMENT; PORE SEALING; SURFACE MODIFICATION; TEMPLATED MESOPOROUS SILICAS; ULTRA-LOW-K DIELECTRICS;

ARGON; ATOMIC SPECTROSCOPY; ATOMS; AUGER ELECTRON SPECTROSCOPY; DEPOSITION; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; GAS PERMEABLE MEMBRANES; OXYGEN; PLASMA DEPOSITION; PLASMAS; SILICA; SURFACE ACTIVE AGENTS; TANTALUM; TANTALUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; VAPORS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 69549095860     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.127     Document Type: Article

References (22)

1. Grill A., Patel V., Rodbell K.P., Huang E., Baklanov M.R., Mogilnikov K.P., Toney M., and Kim H.C. J. Appl. Phys. 94 (2003) 3427
2. Grill A., and Neumayer D.A. J. Appl. Phys. 94 (2003) 6697
3. Zhao D., Yang P., Melosh N., Feng J., Chmelka B.F., and Stucky G.D. Adv. Mater. (Weinheim, Ger.) 10 (1998) 1380
4. Baskaran S., Liu J., Domansky K., Kohler N., Li X., Coyle C., Fryxell G.E., Thevuthasan S., and Williford R.E. Adv. Mater. (Weinheim, Ger.) 12 (2000) 291
5. Yang C.M., Cho A.T., Pan F.M., Tsai T.G., and Chao K.J. Adv. Mater. (Weinheim, Ger.) 13 (2001) 1099
6. Whelan C.M., Le Q.T., Cecchet F., Satta A., Pireaux J.-J., Rudolf P., and Maex K. Electrochem. Solid-State Lett. 7 (2004) F8
7. Rouffignac P., Li Z., and Gordon R.G. Electrochem. Solid-State Lett. 7 (2004) G306
8. Ahearn W.J., Fitzpatrick P.R., and Ekerdt J.G. J. Vac. Sci. Technol. A 3 (2007) 25
9. Lee H.J., Lin E.K., Wu W.L., Fanconi B.M., Lan J.K., Cheng Y.L., Liou H.C., Wang Y.L., Feng M.S., and Chao C.G. J. Electrochem. Soc. 148 (2001) F195
10. Hoyas A.M., Schuhmacher J., Whelan C.M., Baklanov M.R., Carbonell L., Celis J.P., and Maex K. J. Vac. Sci. Technol. B 23 (2005) 1551
11. Peng H.G., Chi D.Z., Wang W.D., Li J.H., Zeng K.Y., Vallery R.S., Frieze W.E., Skalsey M.A., Gidley D.W., and Yee A.F. J. Electrochem. Soc. 154 (2007) G85
12. A. Furuya, E. Soda, K. Yoneda, T. Yoshie, H. Okamura, M. Shimada, N. Ohtsuka, S. Ogawa, in: Proceedings of International Interconnect Technology Conference, 7-9 June 2004, 2004, p. 39.
13. Furuya A., Soda E., Shimada M., and Ogawa S. Jpn. J. Appl. Phys. Part 1 44 (2005) 7430
14. Parratt L. Phys. Rev. 95 (1954) 359
15. Fewster P.F. Rep. Prog. Phys. 59 (1996) 1339
16. Hrubesh L.W., and Poco J.F. Mater. Res. Soc. Proc. 371 (1995) 195
17. Wu W.L., Wallace W.E., Lin E.K., Lynn G.W., Glinka C.J., Ryan E.T., and Ho H.M. J. Appl. Phys. 87 (2000) 1193
18. Wu W.L., and Liou H.C. Thin Solid Films 312 (1998) 73
19. Kondoh E., Asano T., Arao H., Nakashima A., and Komatsu M. Jpn. J. Appl. Phys. Part 1 39 (2000) 3919
20. M. Yoshimaru, S. Koizumi, K. Shimokawa, J. Ida, in: IEEE Reliability Physics Symposium IEEE, New York, 1997, p. 234.
21. Nicollian E.H., and Brews J.R. MOS (Metal Oxide Semiconductor) Physics and Technology (1982), John Wiley & Sons, New York p. 532
22. Jousseaume V., Fayolle M., Guedj C., Haumesser P.H., Huguet C., Pierre F., Pantel R., Feldis H., and Passemard G. J. Electrochem. Soc. 152 (2005) F156