Pore-sealing by etch-byproduct followed by ALD-Ta adhesion layer for Cu/porous low-k interconnects

Proceedings of the IEEE 2004 International Interconnect Technology Conference

Volumn , Issue , 2004, Pages 39-41

  Furuya, Akira ^a   Soda, Eiichi ^a   Yoneda, Katsumi ^a   Yoshie, Toru ^a   Okamura, Hiroshi ^a   Shimada, Miyoko ^a   Ohtsuka, Nobuyuki ^a   Ogawa, Shinichi ^a  

^a Research Dept 2   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; COPPER; DIELECTRIC MATERIALS; INTERCONNECTION NETWORKS; LEAKAGE CURRENTS; POROUS MATERIALS; SEALING (CLOSING); WETTING;

ATOMIC LAYER DEPOSITION (ALD); COPPER INTERCONNECTS; ETCH BYPRODUCT; PORE SEALING;

ETCHING;

EID: 8644278122     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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