Interaction between water fluorine-doped silicon oxide film deposited by PECVD

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 234-241

  Yoshimaru, M ^a   Koizumi, S ^a   Shimokawa, K ^a   Ida, J ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FLUORINE COMPOUNDS; PERMITTIVITY; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD)1;

SEMICONDUCTING FILMS;

EID: 0030681985     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)