Etch-byproduct pore sealing for atomic-layer-deposited-TaN deposition on porous low-k film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7430-7432

  Furuya, Akira ^a,b   Soda, Eiichi ^a   Shimada, Miyoko ^a   Ogawa, Shinichi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

ALD; Cu; Etch byproduct; Low k; Penetration; Pore seal; Porous; TaN

Indexed keywords

BYPRODUCTS; MULTILAYERS; POROUS MATERIALS; REACTIVE ION ETCHING; SEALING (CLOSING); SILICA; SILICON CARBIDE; ULSI CIRCUITS; ULTRATHIN FILMS;

ATOMIC-LAYER-DEPOSITION (ALD); LOW-K; PENETRATION; PORE SEAL;

TANTALUM COMPOUNDS;

EID: 27844498727     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7430     Document Type: Article

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