Robust low oxygen content Cu alloy for scaled-down ULSI interconnects based on metallurgical thermodynamic principles

IEEE Transactions on Electron Devices

Volumn 56, Issue 8, 2009, Pages 1579-1587

  Hayashi, Yoshihiro ^a   Abe, Mari ^a   Tada, Munehiro ^b   Narihiro, Mitsuru ^a   Tagami, Masayoshi ^a   Ueki, Makoto ^a   Inoue, Naoya ^a   Ito, Fuminori ^a   Yamamoto, Hironori ^a   Takeuchi, Tsuneo ^a   Saito, Shinobu ^a   Onodera, Takahiro ^a   Furutake, Naoya ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

Copper; Damascene interconnects; LSI; Reliability; Thermodynamics

Indexed keywords

65-NM-NODE; AL FILMS; BARRIER METALS; CU ALLOY; CU FILMS; CU-AL ALLOYS; DAMASCENE INTERCONNECTS; DUAL DAMASCENE INTERCONNECTS; HIGH QUALITY; HIGH-TEMPERATURE ANNEALING; LOW OXYGEN; LSI; OXYGEN ABSORBERS; OXYGEN ABSORPTION; OXYGEN ATOM; RELIABILITY DEGRADATION; STRESS-INDUCED VOIDING; ULSI INTERCONNECTS;

COPPER; ELECTROCHEMICAL SENSORS; ELECTROCHROMIC DEVICES; LSI CIRCUITS; METALLIC FILMS; METALLURGY; OPTICAL INTERCONNECTS; OXIDATION; OXYGEN; REDUCTION; RELIABILITY; TANTALUM; THERMODYNAMICS;

COPPER ALLOYS;

EID: 68349152783     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2022677     Document Type: Article

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