Suppression of bimodal stress-induced voiding using high-diffusive dopant from Cu-alloy seed layer

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 216-218

  Tonegawa, T ^a   Hiroi, M ^a   Motoyama, K ^a   Fujii, K ^a   Miyamoto, H ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Dielectrics; Doping; Electromigration; Mass spectroscopy; Materials reliability; Scanning electron microscopy; Testing; Thermal stresses; Tin; Transmission electron microscopy

Indexed keywords

DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTROMIGRATION; ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTEGRATED CIRCUIT INTERCONNECTS; MASS SPECTROMETRY; MATERIALS TESTING; SCANNING ELECTRON MICROSCOPY; TESTING; THERMAL STRESS; TIN; TRANSMISSION ELECTRON MICROSCOPY;

DOPING MATERIALS; DUAL DAMASCENE INTERCONNECTS; ELECTROMIGRATION RESISTANCE; IMPURITY DOPING; MASS SPECTROSCOPY; MATERIALS RELIABILITIES; RELIABILITY IMPROVEMENT; STRESS-INDUCED VOIDING;

COPPER ALLOYS;

EID: 84944063044     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219758     Document Type: Conference Paper

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