Statistical study for electromigration reliability in dual-damascene Cu interconnects

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 2, 2004, Pages 237-245

  Lee, Ki Don ^a,b   Ho, Paul S ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Copper; Dielectric materials; Electromigration; Interconnections; Reliability

Indexed keywords

ACTIVATION ENERGY; COPPER; CURRENT DENSITY; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC CONDUCTIVITY; FAILURE ANALYSIS; MONTE CARLO METHODS; OPTICAL INTERCONNECTS; PLASTIC FLOW; RELIABILITY; STATISTICAL METHODS; STRENGTH OF MATERIALS;

ATOMIC DIFFUSION; ATOMIC FLUX; LOGNORMAL DISTRIBUTIONS; MASS TRANSPORT;

ELECTROMIGRATION;

EID: 4043095522     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.827679     Document Type: Article

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