Oxidation of the TA diffusion barrier and its effect on the reliability of CU interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 131-135

  Baek, Won Chong ^a   Zhou, J P ^a   Im, J ^a   Ho, P S ^a   Lee, Jeong Gun ^b   Hwang, Sung Bo ^b   Choi, Kyeong Keun ^b   Park, Shang Kyun ^b   Jung, Oh Jin ^b   Smith, Larry ^c   Pfeifer, Klaus ^c  

^a The University of Texas at Austin   (United States)

^b MagnaChip Semiconductor Ltd   (South Korea)

^c SEMATECH   (United States)

Author keywords

Cu interconnect; High temperature storage (HTS); Ta diffusion barrier oxidation; Via to line BTS

Indexed keywords

COPPER INTERCONNECT; HIGH TEMPERATURE STORAGE (HTS);

DIFFUSION; ELECTRIC POWER SYSTEM INTERCONNECTION; ELECTRON ENERGY LOSS SPECTROSCOPY; OXIDATION; RELIABILITY THEORY; TRANSMISSION ELECTRON MICROSCOPY;

OXIDE FILMS;

EID: 34250716958     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251204     Document Type: Conference Paper

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