A robust 45 nm-node, dual damascene interconnects with high quality Cu/barrier interface by a novel oxygen absorption process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 77-80

  Abe, M ^a   Tada, M ^a   Ohtake, H ^a   Furutake, N ^a   Narihiro, M ^a   Arai, K ^a   Takeuchi, T ^a   Saito, S ^a   Taiji, T ^b   Motoyama, K ^b   Kasama, Y ^b   Arita, K ^b   Ito, F ^a   Yamamoto, H ^a   Tagami, M ^a   Tonegawa, T ^b   Tsuchiya, Y ^b   Fujii, K ^b   Oda, N ^b   Sekine, M ^b   Hayashi, Y ^a   more..

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER ALLOYS; GIBBS FREE ENERGY; THIN FILMS;

BARRIER METALS; DUAL DAMASCENE INTERCONNECTS (DDI); MOLECULAR PORE STACKING (MPS); NATURAL OXIDES;

INTERFACES (MATERIALS);

EID: 33847719083     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.2005.1609271     Document Type: Conference Paper

References (7)

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3. M. Tada, et al., on VLSI Tech. 2005, p.18.
4. H.Ohtake,et al., IEDM 2003, p.853.
5. M. Ueki, et al., on VLSI Tech. 2004, p.60.
6. K.-M. Yin, et al., Thin Solid Films 388 (2001) p.27.
7. M. Tada, et al., IEDM 2003, p.845