Effects of AL doping on electromigration performance of narrow single damascene Cu interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 667-668

  Yokogawa, S ^a   Tsuchiya, H ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34250770523     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251315     Document Type: Conference Paper

References (8)

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7. H. Kawasaki and C.-K. Hu, 1996 Symp. on VLSI Tech. Digest of Tech. Papers, pp. 192-193 (1996).
8. I.A. Blech, J. of Appl. Phys., 47, pp.1203-1208 (1976).