SCOPUS 정보 검색 플랫폼

Volumn 388, Issue 1-2, 2001, Pages 27-33

Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealing

(10) Yin, Kai Min a Chang, Li b Chen, Fu Rong a Kai, Ji Jung a Chiang, Cheng Cheng a Chuang, Graham a Ding, Peijun c Chin, Barry c Zhang, Hong c Chen, Fusen c

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c Metal Deposition Products Group (United States)

Author keywords

Cu metallization; Diffusion barrier; Oxidation; Transmission electron microscopy

Indexed keywords

AMORPHOUS FILMS; ANNEALING; COPPER; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN BOUNDARIES; INTERFACES (MATERIALS); METALLIZING; MICROSTRUCTURE; OXIDATION; TANTALUM; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

AMORPHOUS INTERLAYERS;

SEMICONDUCTING FILMS;

EID: 0035372125 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)00782-9 Document Type: Article

Times cited : (40)

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