A 600V 8.7Ohmmm2 lateral superjunction transistor

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Rub M ^a   Bar M ^a   Deml, G ^b   Kapels, H ^c   Schmitt, M ^c   Sedlmaier, S ^c   Tolksdorf, C ^c   Willmeroth, A ^c  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b Infineon Technologies Asia Pacific   (Singapore)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING VOLTAGE (BV); COMPENSATION STRUCTURE; DEVICE SIMULATIONS; DEVICES BLOCKING;

ELECTRIC RESISTANCE; INTEGRATED CIRCUIT LAYOUT; MICROPROCESSOR CHIPS; SEMICONDUCTOR JUNCTIONS; VOLTAGE CONTROL;

MOSFET DEVICES;

EID: 34247518763     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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11. TH 8826)
12. www.infineon.com